Electronics

Alpha Power Solutions Limited

🌍 Official Website 🏢 HKSTP Source
92 Potential

Decision Maker

Mr. Jack Cheung
jackcheung@alpha-powers.com
'+852 6344 6521
N/A
Raw Description
Alpha Power Solutions is a leading manufacturer in China, focusing on the development of third-generation semiconductor silicon carbide power devices. | APS was founded in 2015 as the silicon carbide division of Vitelic Technology in Hong Kong and was spun off in 2017 as Alpha Power Solutions HK Limited. In 2020, APS restructured and relocated its headquarters to Shanghai. | Description | Alpha Power Solutions is a leading manufacturer in China, focusing on the development of third-generation semiconductor silicon carbide power devices || Product | Our diodes feature MPS design, which is more robust and reliable than standard Schottky barrier diodes. | Our SiC MOSFETs replace silicon devices to enable lower switching and conduction losses with higher blocking voltages and avalanche capability.

Strategic Analysis

Executive Brief

Alpha Power Solutions (APS) is a specialized manufacturer of third-generation (3G) semiconductors, specifically Silicon Carbide (SiC) power devices. They focus on MPS (Merged PiN Schottky) Diodes and high-voltage SiC MOSFETs designed to replace legacy Silicon in high-efficiency power conversion, EV traction inverters, and industrial power supplies.

Strategic Fit & Lead Score

Lead Score: 92/100

Why this Score? APS operates at the physical limits of Silicon Carbide. While SiC is superior to Silicon, it faces significant thermal bottlenecks as power densities increase in MOSFETs. Diamond (the "4th Generation" semiconductor) is the only material that can effectively "sink" the extreme heat flux generated by SiC dies. Furthermore, 6C's ability to provide both the material (PCD/SCD) and the MPCVD reactors allows APS to either upgrade their current modules or begin an R&D roadmap toward Diamond-on-SiC heterostructures.

6C Solutions Proposal

Application Area 6C Solution Technical Value Prop
Thermal Management PCD Heat Spreaders (Thermal grade) Diamond’s thermal conductivity (>2000 W/mK) is 5x higher than SiC. Using 6C PCD as a submount reduces junction temperatures by 30-50%, extending the life of APS MOSFETs.
Heterogeneous Integration Direct Diamond-on-SiC Coating 6C's proprietary MPCVD process can grow diamond directly on the backside of SiC wafers. This eliminates thermal interface material (TIM) resistance, allowing for "Cooler-running" MPS Diodes at higher current densities.
Next-Gen Power R&D Custom MPCVD Reactor (System Build) Provides APS the capability to develop 4th Gen "Power Diamond" devices (Schottky Barrier Diodes) in-house, moving beyond the current SiC market saturation.
Wafer Processing MPCVD Consulting & Recipe Design Optimization of hydrogen-rich environments and plasma chemistry to assist APS in surface passivation or doping techniques for their existing SiC/SCD interface research.

Engagement Hooks

Technical Questions for APS Engineering Team:

  • "As you scale your SiC MOSFETs to higher blocking voltages and avalanche capabilities, what is the current Delta-T (temperature rise) at the die-attach interface, and is thermal throttling limiting your maximum power density?"
  • "Have you evaluated the reduction in RθJC (Junction-to-Case Thermal Resistance) achievable by replacing AlN or Al2O3 substrates with 6C Polycrystalline Diamond?"

Value Statement:

"6C Diamond Technology enables Alpha Power Solutions to break the 'Thermal Wall' of SiC, allowing your MOSFETs to run at 2x power density while maintaining higher reliability than standard MPS designs."